continental device india limited data sheet page 1 of 3 general purpose transistor n?p?n transistor marking bcw 66f = ef bcw 66g = eg bcw 66h = eh absolute maximum ratings bcw66f 66g 66h collector?base voltage (open emitter) ?v cbo max. 75 75 75 v collector?emitter voltage (open base) ?v ceo max. 45 45 45 v emitter?base voltage (open collector) ?v ebo max. 5 5 5 v collector current (d.c.) ? i c max. 800 800 800 ma total power dissipation at t amb = 25c p tot max 225 225 225 mw d.c. current gain ?i c = 100 m a; ?v ce = 10 v h fe min. 35 50 80 ?i c = 10 ma; v ce = 1 v min. 75 110 180 min. 100 160 250 ?i c = 100 ma; v ce = 1 v max. 250 400 630 ?i c = 500 ma; v ce = 2 v min. 35 60 100 bcw66f, BCW66G bcw66h package outline details all dimensions in mm pin configuration 1 = base 2 = emitter 3 = collector 3 2 1 sot-23 formed smd package continental device india limited an iso/ts 16949, iso 9001 and iso 14001 certified company
continental device india limited data sheet page 2 of 3 ratings (at t a = 25c unless otherwise specified) limiting values bcw 66f 66g 66h collector?base voltage (open emitter) ?v cbo max. 75 75 75 v collector?emitter voltage (open base) ?v ceo max. 45 45 45 v emitter?base voltage (open collector) ?v ebo max. 5 5 5 v collector current (d.c.) ? i c max. 800 800 800 ma total power dissipation at t amb = 25c p tot max 225 225 225 mw storage temperature t stg ?55 to +150 c thermal characteristics t j = p (r th j?t + r th s?a ) + t amb thermal resistance from junction to ambient r th j?a 556 556 556 c/mw characteristics (at t a = 25c unless otherwise specified) collector?emitter breakdown voltage ?i c = 10 ma; i b = 0 ?v (br)ceo min. 45 45 45 v collector?emitter breakdown voltage ?i c = 10 m a; v eb = 0 ?v (br)ces min. 75 75 75 v emitter?base breakdown voltage ?i e = 10 m a; i c = 0 ?v (br)ebo min. 5 5 5 v collector cut?off current ?v ce = 45 v; i c = 0 v ?i ces max. 20 20 20 na emitter cut?off current v eb = 4 v; i c =0 i ebo max. 20 20 20 na output capacitance at f = 1 mhz i e = 0; ?v cb = 10 v c c max. 12 12 12 pf input capacitance at f = 1 mhz i c = 0; ?v eb = 0.5 v c e max. 80 80 80 pf saturation voltages ?i c = 500 ma; ?i b = 50 ma ?v cesat max. 0.7 0.7 0.7 v ?i c = 100 ma; ?i b = 10 ma ?v cesat typ. 0.3 0.3 0.3 v ?i c = 500 ma; ?i b = 50 ma ?v besat max. 2 2 2 v noise figure at r s = 1 k w ?i c = 0.2 ma; ?v ce = 5 v f = 1 khz, bw = 200 hz nf max. 10 10 10 db current gain-bandwidth product i c = 20 ma, v ce = 10 v, f = 100 mhz min. 100 100 100 mhz bcw66f, BCW66G bcw66h
continental device india limited data sheet page 3 of 3 notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-579 6150 fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com
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